| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da67aea049cb8d440be5ca686d95c2cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8088db6e26e5a4416dbf8b47b792dec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99306c4f3af085e5fc38404d1dc4408c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2004-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_078cc7194ac4d1efa7b195df372ad974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21f41264b27b9fa8e6237007a0359b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_952157494ae6682a3cfc8943a5433351 |
| publicationDate |
2006-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006115979-A1 |
| titleOfInvention |
Plasma etch process for multilayer vias having an organic layer with vertical sidewalls |
| abstract |
A process is provided for fabricating a via 52 between bonded wafers without undercutting an organic bonding material 32 . The process for forming the via 52 in a structure including a dielectric material 14 and an organic bonding material 32 , comprises forming a resist material 42 on the dielectric layer 14 and etching through the dielectric layer 14 and the organic bonding material 32 with 60CF 4 /20Ar/60CHF 3 /20N 2 . The resist may then be removed with an anisotropic high density oxygen plasma. |
| priorityDate |
2004-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |