| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-006 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2005-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0afa51ca8d5eb271d9eb82ef795a97ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee0281af9f4c2fe719317c51f223ba9e |
| publicationDate |
2006-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006228879-A1 |
| titleOfInvention |
Thin film resistor head structure and method for reducing head resistivity variance |
| abstract |
A method of making integrated circuit thin film resistor includes forming a first dielectric layer ( 18 B) over a substrate and providing a structure to reduce variation of head resistivity thereof by forming a dummy fill layer ( 9 A) on the first dielectric layer, and forming a second dielectric layer ( 18 D) over the first dummy fill layer. A thin film resistor ( 2 ) is formed on the second dielectric layer ( 18 D). A first inter-level dielectric layer ( 21 A) is formed on the thin film resistor and the second dielectric layer. A first metal layer ( 22 A) is formed on the first inter-level dielectric layer and electrically contacts a portion of the thin film resistor. Preferably, the first dummy fill layer is formed as a repetitive pattern of sections such that the repetitive pattern is symmetrically aligned with respect to multiple edges of the thin-film resistor ( 2 ). Preferably, the first dummy fill layer is formed so as to extend sufficiently far beyond ends of the thin-film resistor to ensure only a negligible amount of systematic resistance error due to misalignment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106684078-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8659122-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283303-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014240080-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016181710-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10101414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019245708-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017131368-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011180901-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2355135-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016181710-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104009033-A |
| priorityDate |
2005-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |