| abstract |
The nitride-based semiconductor device includes a carrier traveling layer 1 composed of non-doped Al x Ga 1-x N (0≦X<1); a barrier layer 2 formed on the carrier traveling layer 1 and composed of non-doped or n-type Al Y Ga 1-Y N (0<Y≦1, X<Y) having a lattice constant smaller than that of the carrier traveling layer 1 ; a threshold voltage control layer 3 formed on the barrier layer 2 and composed of a non-doped semiconductor having a lattice constant equal to that of the carrier traveling layer 1 ; and a carrier inducing layer 4 formed on the threshold voltage control layer 3 and composed of a non-doped or n-type semiconductor having a lattice constant smaller than that of the carrier traveling layer 1 . The nitride-based semiconductor device further includes a gate electrode 5 formed in a recess structure, a source electrode 6 and a drain electrode 7. |