patent/US-2007096103-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007096103-A1

Outgoing Links

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filingDate	2006-12-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ebd3d981e448ac1ff4d6ff34fdc7cd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_340257e91321327d23393519a829bc78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09834271f8abce0622a5fafd81bf752b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58ad0b8502c205bebdc7a048c599530b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34864e8a4ed34081e2c73e1d29db4323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3c9d37d690eff3001cd96037a94a4a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6548cf723a46ad38ac1d8f9fde582c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00ad868a30f259efd3939c6581569f0d
publicationDate	2007-05-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2007096103-A1
titleOfInvention	Semiconductor device, annealing method, annealing apparatus and display apparatus
abstract	The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017066079-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004254769-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007228469-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10780525-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8346497-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993919-B2
priorityDate	2002-09-25^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6632711-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6252714-B1
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408

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