http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111522-A1

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filingDate 2005-11-12^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_743ab128ea9c7819aab91815af1f7be7
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publicationDate 2007-05-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007111522-A1
titleOfInvention Formation of metal silicide layer over copper interconnect for reliability enhancement
abstract A method of fabrication of a sputtered metal silicide layer over a copper interconnect. We form a dielectric layer over a conductive layer. We form an interconnect opening in the dielectric layer. We form a copper layer at least filling the interconnect opening. We planarize the copper layer to form a copper interconnect in the interconnect opening. The copper interconnect is over polished to form a depression. We form metal silicide layer over the copper interconnect using a low temperature sputtering process. We can form a cap layer over the metal silicide layer.
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