| abstract |
A method is provided for forming a near infrared (NIR) active pixel sensor array on a silicon-on-insulator (SOI) substrate. The method forms a first wafer comprising a high resistance first Si substrate and a moderately doped first Si layer, and forms a second wafer comprising a first silicon oxide layer and a second Si layer. The method bonds the first wafer to the second wafer, forming a SOI substrate. Then, a diode is formed with a p-n junction space charge region extending into the first Si substrate. A thin-film transistor (TFT) is formed in the second Si layer, and interconnects are formed between the TFT and the diode. For example, first Si substrate may have a resistivity of greater than 100 ohm-cm, and the first Si layer may have a dopant concentration in the range of about 1×10 16 to about 5×10 18 cm −3 . |