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publicationDate 2007-10-04^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2007232068-A1
titleOfInvention Slurry for touch-up CMP and method of manufacturing semiconductor device
abstract A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm, a multivalent organic acid containing no nitrogen atoms, and a nitrogen-containing heterocyclic compound. The slurry has a pH of 8 to 12.
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