http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008102400-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-00 |
| filingDate | 2006-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4fa807579f1a2223ccff29e99674f27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74f1c78fc4527695667ef911657c50cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50eb3ca512bac54cc7fa3b9fc790d89a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70139b0c22f0323101d61e3dc2c157b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39fa21b66a27ec84514c75e1889e6fba |
| publicationDate | 2008-05-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2008102400-A1 |
| titleOfInvention | Negative tone silicon-containing resist for e-beam lithography |
| abstract | The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009269935-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9671694-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9348228-B2 |
| priorityDate | 2006-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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