http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008171424-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a6c760472ee4c29e9cd26152ace2eb0
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0265
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2007-01-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_999c7b768b0de454f7826b7095ccdb85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aba0fcbe2b65acf175ad259f1957315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c173beab7da4ee3a76d53501fd4466b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52ca99dc677633d568cc23e46a3ddb32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8581380e4e820edd8b4351650eceb83
publicationDate 2008-07-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008171424-A1
titleOfInvention Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies
abstract A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200143477-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016194753-A1
priorityDate 2007-01-16^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002163024-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004077156-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

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