| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_827f58bacb8fef905977e1f8b3c7aace |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-41 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14 |
| filingDate |
2008-02-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a8e0a9ad502a64219860f054f7cd3c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7dbb3d72e777ac35c1c5f992c774740
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3df1e9c8c8f3111f30b59804f192bcda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c96dd18e82d920f4758f0d9a8410eab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2139cb1bfc012ca542e568d63aa7199 |
| publicationDate |
2008-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008198678-A1 |
| titleOfInvention |
Programmable sram source bias scheme for use with switchable sram power supply sets of voltages |
| abstract |
A memory circuit has a high voltage and low voltage supply nodes. One of a first and second sets of voltages is selectively applied to the supply nodes of the memory circuit in dependence upon memory operational mode. If in active read/write mode, then the first set of voltages is selectively applied. Conversely, if in standby no-read/no-write mode, then the second set of voltages is selectively applied. A low voltage in the second set of voltages is greater than a low voltage in the first set of voltages by a selected one of a plurality of low offset voltages, and a high voltage in the second set of voltages is less than a high voltage in the first set of voltages by a selected one of a plurality of high offset voltages. The offset voltages are provided by diode-based circuits that are selectively active. Selective activation is provided by either selectably blowable fuse elements or selectively activated switching elements. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7688669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633716-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016225438-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10984855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008198679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7623405-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008211513-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010309736-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8654574-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010165709-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8482964-B2 |
| priorityDate |
2007-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |