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filingDate 2008-09-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90d1b9a118d82353f851567a5169064
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publicationDate 2008-12-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008314754-A1
titleOfInvention Increasing an electrical resistance of a resistor by nitridization
abstract A method for increasing an electrical resistance of a resistor. A fraction F of an exterior surface of a surface layer of a resistor of a semiconductor structure is exposed to the nitrogen-comprising molecules. An anodization electrical circuit is formed and includes: a DC power supply, an electrolytic solution including nitrogen, and the resistor partially immersed in the electrolytic solution. The DC power supply is activated and generates a voltage output, that causes an electrolytic reaction in the electrolytic solution near the resistor. The electrolytic reaction generates nitrogen ions from the nitrogen in the electrolytic solution. The fraction F is exposed to the nitrogen ions. A portion of the surface layer is nitridized by being reacted with the nitrogen ions at a temperature above ambient room temperature such that an electrical resistance of the resistor is increased.
priorityDate 2000-11-14^^<http://www.w3.org/2001/XMLSchema#date>
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