| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38a06170e4bcab8f1bb2eba1584c569a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cfccd7bff8c839ebb2254f67d9bf95bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd8317526535265948196ba60856c843 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate |
2007-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d2e58fb9e42b3c11bd1c11c77cab228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a439fbd3386eb23127427c28aa6ae18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2121a65a16fbfee1841e6fa615496a23 |
| publicationDate |
2010-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010021700-A1 |
| titleOfInvention |
Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method |
| abstract |
The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101806748-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014127478-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011165523-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9298094-B2 |
| priorityDate |
2006-10-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |