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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f1577acd099f6cde01f71cc5c3fbac5
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publicationDate 2010-02-04^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010029064-A1
titleOfInvention Group iii-nitrides on si substrates using a nanostructured interlayer
abstract A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured In x Ga 1-x N (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.
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