| abstract |
A method of forming metallization in a semiconductor device, including forming an interlayer insulation layer on a semiconductor layer, forming a hole in the interlayer insulation layer by removing a portion of the interlayer insulation layer, forming a metal seed layer in the hole and on an upper surface of the interlayer insulation layer, such that the metal seed layer includes a first portion on the upper surface of the interlayer insulation layer, a second portion on an upper side surface of the hole, and a third portion on central and lower side surfaces of the hole, selectively plasma-treating a portion of the metal seed layer, forming a metal layer on the metal seed layer to fill the hole, and forming metallization by polishing the metal layer. |