http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010178432-A1

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filingDate 2007-01-18^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76df8f065fc702f74681823b85e8fa98
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publicationDate 2010-07-15^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2010178432-A1
titleOfInvention Method of Forming Pattern Film, and Pattern Film Forming Apparatus
abstract An objective is to provide a method of forming a pattern film in which a dense conductive pattern with no defect can be formed even in a low temperature treatment, the formed pattern film having the same thickness as in the conventional method exhibits excellent properties of conductivity, film strength, transmittance and so forth together with improved stability at high temperature and humidity, and a pattern film with no lack can be stably formed with an easy-to-use apparatus, and to provide a pattern film forming apparatus thereof. Disclosed is a method of forming a pattern film possessing the steps of forming a thin film in a form of a predetermined geometric pattern on a substrate employing a solution comprising a metal ion, and subsequently treating the thin film via an atmospheric pressure plasma treatment to prepare a pattern film.
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