Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03B27-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
filingDate |
2009-11-19^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_156cd0ccfd8d84e45134f77d4f5933a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be835a103388ce1c8816005f37adda0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e82653ba4444ac57375740ceeb8f682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c59485851f31050bab7984e3210153a |
publicationDate |
2010-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2010297550-A1 |
titleOfInvention |
Compositions comprising sulfonamide material and processes for photolithography |
abstract |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009117489-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9244355-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9034558-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014038102-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9158198-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871428-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9482945-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10222699-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008193872-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8257902-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016066095-A |
priorityDate |
2008-11-19^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |