http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011169050-A1

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publicationDate 2011-07-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2011169050-A1
titleOfInvention METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALS
abstract A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III-nitride semiconductor, at a temperature below 550° C., to form a device quality heterojunction between the first semiconductor material and the III-nitride semiconductor, wherein the first semiconductor material is different from the III-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the III-nitride semiconductor.
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