| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12aec38d96748d0a5d9b2aef3c8b46cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5603b039bdc05838ed1d5caa8b5282f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8b49e492336dbfb27394b8eb878aaf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5370f938e153dbc023522a40ef188db2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_363f3e6c52f839e9f1d50f6421ede7a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0c86416f6fbacb7784f18f6594c78fb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate |
2010-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77b875a4929029b041af311c836d9e0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5241d93149a5fbfbd13e5730819498a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86fda11536e8bfff76878b3b846a2d4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c97c809d4f73806cc8655373ad2db1f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82cb4816534d4d67fb061405137a98c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d45661bcecf66f07609284966948cc33 |
| publicationDate |
2012-01-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012003811-A1 |
| titleOfInvention |
Method for manufacturing semiconductor substrate |
| abstract |
A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012273800-A1 |
| priorityDate |
2009-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |