| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1ef3d064bba6b9e8d133cbe99861082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5886f04742b849bc36288476c5cdc439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb991bbd22f261382309bbc3888d393e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_347b5a7147a5d96032eda0149bc9a798
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a0117855ccd095262f91e5d6e8b6026 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2011-09-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a33cfc60075ac3be42858dad6773cd62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fcbe9c730c3a940f567e33517088282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507b4325a8d4e79e92c633f9284629bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20ec6916040a18f3f90518b62a2035fc |
| publicationDate |
2012-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012070968-A1 |
| titleOfInvention |
Substrate processing method and method of manufacturing crystalline silicon carbide (sic) substrate |
| abstract |
The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate ( 1 ) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate ( 1 ) in which the plasma irradiation is performed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8860040-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9797064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2736067-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9758902-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9017804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9738991-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9279192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015108504-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112864006-A |
| priorityDate |
2009-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |