| abstract |
The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps ofn i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm in order to form the layer comprising polyimide B,n nand a transistor obtainable by that process. |