| abstract |
The invention relates to a CVD reactor having a process chamber ( 23 ) and a substrate holder support ( 1 ) arranged therein, said support comprising at least one bearing surface ( 4 ), wherein a plurality of gas inlet lines ( 7, 8 ) open out into the bearing surface ( 4′ ). The CVD reactor further has a substrate holder ( 2 ), the back side thereof facing the bearing surface ( 4′ ), wherein the gases fed through the gas inlet lines ( 7,8 ) into the space between the bearing surface ( 4′ ) and back side form a gas cushion ( 19 ) supporting the substrate holder ( 2 ). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line ( 7, 8 ) and that are separated from each other by a means ( 15 ) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line ( 13, 14 ), via which the gas fed into the inner zone (C) by way of the inlet line ( 7, 8 ) can be discharged. Gases having different heat conduction properties are fed into the zones. |