http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012319252-A1

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filingDate 2011-01-20^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-12-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2012319252-A1
titleOfInvention Method for manufacturing semiconductor device, substrate processing apparatus, and semiconductor device
abstract A method for manufacturing a semiconductor device includes performing a cycle a predetermined number of times to form a film on a substrate. The cycle includes feeding a first material containing a first element, to be adsorbed on a substrate surface, to a processing chamber where the substrate is accommodated; feeding a second material containing a second element, adsorbed on the substrate surface, to the processing chamber after the adsorption of the first material; feeding a third material containing a third element to the processing chamber, so that the substrate surface is modified; and removing an atmosphere in the processing chamber. A content of the second element in the film is controlled by adjusting an adsorption quantity of the first material and an adsorption quantity of the second material with respect to a saturated adsorption quantity of the first material adsorbed on the substrate surface.
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