| abstract |
Disclosed is a semiconductor light emitting chip ( 20 ) that is composed of: a substrate ( 10 ), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces ( 25, 26 ) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions ( 23, 24 ) in the side surfaces ( 25, 26 ), the modified regions being formed by laser radiation; and a light emitting element ( 12 ), which is provided on the substrate front surface ( 10 a ) of the substrate ( 10 ). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate. |