Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_487adcdbdd117de3c12467e89d52aebf http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c01c0daa872cbfec5a1de840ac3d032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3e744834c888ae52117b55dad557887 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc4951611988fc4708a938aa6bc5fb64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ab44e15baa10a91bd42f8119017e643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c833fd1b7ce73d5966afd6d42a020c64 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-173 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 |
filingDate |
2012-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ace07e2bc5d1cc34fd358066f0bbf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d999177ab5301e515645e8b2347e8e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67d748365acbd98bb60dbdb11e81688c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bcdda05c59c0b9574f0404c11efcd9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9bc012c6c717be28f2ff0781af3bbb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c4554b8040c66877ebaebeb2b70ad58 |
publicationDate |
2013-05-09^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2013114633-A1 |
titleOfInvention |
Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device |
abstract |
A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093395-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015325677-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105633241-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013056743-A1 |
priorityDate |
2001-10-29^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |