http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013114633-A1

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filingDate 2012-11-28^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-05-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013114633-A1
titleOfInvention Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device
abstract A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093395-B2
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priorityDate 2001-10-29^^<http://www.w3.org/2001/XMLSchema#date>
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