| abstract |
In a first aspect, a metal-insulator-metal (“MIM”) stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per O between about −3 and −6 eV. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. |