| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 |
| filingDate |
2013-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d661d5ccd168e46c27f5654da317e68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_049749207e8051c6f63d28dc6536909f |
| publicationDate |
2013-06-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013140585-A1 |
| titleOfInvention |
Junction barrier schottky rectifiers having epitaxially grown p+-n junctions and methods of making |
| abstract |
A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p + -n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried P + guard ring, a regrown or implanted junction termination extension (JTE) region, or a “deep” mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014266403-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110752260-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3961724-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711599-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018002895-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015372093-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9659927-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181532-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10784381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016190126-A1 |
| priorityDate |
2006-04-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |