| abstract |
Provided is a silicon carbide ceramic having a small amount of resistivity change due to temperature change and being capable of generating heat by current application; and containing silicon carbide crystals having 0.1 to 25 mass % of 4H—SiC silicon carbide crystals and 50 to 99.9 mass % of 6H—SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass % or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding these silicon carbide particles to each other and having a silicon content of from 10 to 40 mass %. |