| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f397f7315ff84c7815029e2f91128ac8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 |
| filingDate |
2013-03-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf347bf8644519a49fc4698037b95811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81f4eaf55e1791f6a89c1dfdaf651a2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_516aae8dfead9f58e0bd1c2e523c07f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e4993a3a445b9afd3e800ba49bc49b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a766c3db1f070efa6a4028ecfa7b792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e99a5af90545a776de131483549491d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c082403bb9cca93d6dd12cd928e8a2a7 |
| publicationDate |
2013-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013250992-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device and semiconductor device |
| abstract |
A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019221716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910521-B2 |
| priorityDate |
2009-10-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |