| abstract |
A semiconductor device includes a substrate, a gate insulating film, a gate electrode, an interlayer insulating film, and a buffer film containing Ti and N and containing no Al, and a source electrode containing Ti, Al, and Si. In the semiconductor device, a contact hole is formed away from the gate electrode so as to extend through the interlayer insulating film. The gate insulating film is formed on a main surface of the substrate, which is formed of a plane having an off angle of not less than 50° and not more than 65° relative to a {0001} plane. The buffer film is formed in contact with a side wall surface of the contact hole. The source electrode is formed on and in contact with the buffer film and the main surface of the substrate. |