| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5495b5da95777af6a4161acb9dd6f3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c3ce8f5568f2eeda76ad82046aa4240
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1657ae65a2977858f623dc55b8f006b7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2012-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d4020867ddb110d38f95f7b97b301f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf99978a7e80f83dad7dac6ce46fa4fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473491db9a60d23151e03b7ba7f863c1 |
| publicationDate |
2014-03-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014077266-A1 |
| titleOfInvention |
Heterostructure Transistor with Multiple Gate Dielectric Layers |
| abstract |
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. A first gate dielectric layer is disposed on the second active layer. A second gate dielectric layer is disposed on the first gate dielectric layer. A passivation layer is disposed over the second gate dielectric layer. A gate extends through the passivation layer to the second gate dielectric layer. First and second ohmic contacts electrically connect to the second active layer. The first and second ohmic contacts are laterally spaced-apart, with the gate being disposed between the first and second ohmic contacts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879383-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10587194-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017294531-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016056817-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015123168-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9525052-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016079386-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014239346-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018277434-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114539-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629696-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7330605-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522670-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11296601-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249615-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541324-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014097471-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019115443-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318592-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016064488-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761704-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019075558-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705511-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019267481-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019267480-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9755040-B2 |
| priorityDate |
2012-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |