| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8643191cf8ae2c2cac1b18a99fb2c00 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-10-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d7a305d1e35e66d06a59a824cdee5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c434fa77510d412f82dc97b432aa62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0803fb079ba1ef8d9b49a9c2d9857fcd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20853b0defb56c7bf039a610d96e7a3f |
| publicationDate |
2014-07-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014183554-A1 |
| titleOfInvention |
Schottky barrier diode and method of manufacturing the same |
| abstract |
A Schottky barrier diode includes: an n+ type silicon carbide substrate; an n− type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate and includes an electrode area and a terminal area positioned outside of the electrode area; a first trench and a second trench disposed on the n− type epitaxial layer in the terminal area; a p area disposed under the first trench and the second trench; a Schottky electrode disposed on the n− type epitaxial layer in the electrode area; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first trench and the second trench are adjacently positioned to form a step. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-172837-U1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108054195-A |
| priorityDate |
2012-12-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |