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publicationDate 2014-07-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014193965-A1
titleOfInvention REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS
abstract A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
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