http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217501-A1

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publicationDate 2014-08-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2014217501-A1
titleOfInvention Semiconductor device and method for fabricating the same
abstract The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region; and a drain region formed in the drift region; a multiple reduced surface field (RESURF) structure embedded in the drift region of the substrate; and a gate dielectric layer formed over the substrate; wherein the first conductivity type is opposite to the second conductivity type.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019131390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6995307-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019033108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015349124-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10205014-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566192-B2
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