Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f20cb045e7a60c5b417b00b3d8053ee8 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24942 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-917 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-342 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
filingDate |
2014-02-06^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c887318c8a47fa5a729776323152e036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97da80a9e8856961f165692dc3ef6a4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bebbf9b60dd268c6eeebca28114e0369 |
publicationDate |
2014-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2014231768-A1 |
titleOfInvention |
Non-Blocked Phosphorescent OLEDs |
abstract |
An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum. |
priorityDate |
2005-04-21^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |