| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec24cf853e108d093de2fd7fa37c5d9c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-77742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-7706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B1-02 |
| filingDate |
2014-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20eb41dd8cd14e246b8a6e3cac9a9efc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb4310a111677a948f6803c6925e5064
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e02af7819fa6f8fa600d3601ef8ac93f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a62d4c4c599f0ca8f94a87f01c0cc29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8c002e3035d7af8ccad4cebfebcb73e |
| publicationDate |
2014-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014271436-A1 |
| titleOfInvention |
Rare Earth Oxyorthosilicate Scintillation Crystals |
| abstract |
The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107250843-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10494733-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9606245-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497484-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9835737-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462338-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825573-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11174567-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016238718-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11680334-B2 |
| priorityDate |
2013-03-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |