| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267 |
| filingDate |
2013-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebe0ebc5020abca43b66242ac419e7a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb32fb2a8e01ddb13dfc2567326f3fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54e363cf7f38840e7627d670333c787a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e11042e97ff4992ad7a0a28f901be7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d95eafa15f35c3d66e50db22eca5ca29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_033722378485d1806c1b14069323bb7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6147e5dfd3b721ca7f0cf5a6c0280cb8 |
| publicationDate |
2015-02-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015048423-A1 |
| titleOfInvention |
Semiconductor device having a iii-v crystalline compound material selectively grown on the bottom of a space formed in a single element substrate. |
| abstract |
A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric layer over the substrate and on sidewalls and a bottom of the trench. The dielectric is removed from the bottom of the trench to expose the substrate at the bottom of the trench. A crystalline compound material is selectively grown on the substrate at the bottom of the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017250265-A1 |
| priorityDate |
2013-08-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |