| abstract |
A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, a gate electrode, an interlayer insulating film, and a gate interconnection. The silicon carbide substrate includes: a first impurity region; a second impurity region provided on the first impurity region; and a third impurity region provided on the second impurity region so as to be separated from the first impurity region. A trench has a side portion and a bottom portion, the side portion extending to the first impurity region through the third impurity region and the second impurity region, the bottom portion being located in the first impurity region. When viewed in across section, the interlayer insulating film extends from above the third impurity region to above the gate electrode so as to cover the corner portion. |