| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79123a25478c2ce2d9fd74d2c4dd2bfb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2014-06-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d5571095e20f83d02680beb1e067d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c596511bc957c74f330a1f8fedbcd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9665d32b29a5248af1f79499d6021e83 |
| publicationDate |
2015-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015303246-A1 |
| titleOfInvention |
Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate |
| abstract |
In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797046-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573711-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019019859-A1 |
| priorityDate |
2014-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |