| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-866 |
| filingDate |
2014-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af55439f9f1c93d0d1c64ea3ab4fdb76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77e607d364bef224c24f50f9813b4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_065d3925e76c48f55abd7a7298ac3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2431598c8a18f78a3d7ac1217150366a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e664ebe949d0f2098ef9650698fc67c |
| publicationDate |
2016-03-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016064573-A1 |
| titleOfInvention |
Semiconductor device including zener diode and method of manufacturing thereof |
| abstract |
An embodiment of the present disclosure provides a semiconductor device. The semiconductor device includes an insulator formed on a top surface of a semiconductor substrate. The semiconductor device also includes a semiconductor layer containing a first region of a first conductivity type and formed on the insulator layer. The first region is a P+ region or an N+ region and has a volume of over 50-80% of that of the semiconductor layer. The semiconductor device further includes a second region of a second conductivity type in direct contact with the first region and forming a P-N junction with the first region. The second region has a doping concentration heavier than that of the first region. In addition, the semiconductor device includes a first metallization region in electrical contact with the first region and a second metallization region in electrical contact with the second region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114551238-A |
| priorityDate |
2014-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |