| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-11-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_573f89924e0f623b1461d887c0e2489e |
| publicationDate |
2016-03-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016079398-A1 |
| titleOfInvention |
Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same |
| abstract |
A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate overlapping an upper surface and a lateral surface of the active pillar. The inner portion of the active pillar includes a first semiconductor layer having a first lattice constant, and the outer region of the active pillar includes a second semiconductor layer having a second lattice constant smaller than the first lattice constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016013291-A1 |
| priorityDate |
2013-08-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |