| abstract |
A method of manufacturing a Fin-FET device includes forming a plurality of fins in a substrate, which the substrate includes a center region and a periphery region surrounding the center region. A gate material layer is deposited over the fins, and the gate material layer is etched with an etching gas to form gates, which the etching gas is supplied at a ratio of a flow rate at the center region to a flow rate at the periphery region in a range from 0.33 to 3. |