http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016111149-A9

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filingDate 2012-04-18^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4758523c2f648963f1cfbb5b90ed91c3
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publicationDate 2016-04-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2016111149-A9
titleOfInvention Adaptive resistive device and methods thereof
abstract A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
priorityDate 2011-04-18^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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