| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cebc9740ef706cde29e885504f274ffa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 |
| filingDate |
2014-09-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99acb4b074094251f50ea6452c55f441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d41f0e095482f13a225217d9883d46e5 |
| publicationDate |
2016-07-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016200849-A1 |
| titleOfInvention |
Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate |
| abstract |
A copolymer for lithography having a turbidity Th(80) of 1.0 NTU or more and 4.6 NTU or less and a turbidity Tm(80) of 1.0 NTU or more and 3.8 NTU or less, in which this turbidity Th(80) is a turbidity of a PGMEA solution when n-heptane in an amount to be 80% of (X)h is added to this PGMEA solution where (X)h denotes an amount of n-heptane added to have a turbidity of 10 NTU when n-heptane is added to the PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution; and this turbidity Tm(80) is a turbidity of a PGMEA solution when methanol in an amount to be 80% of (X)m is added to this PGMEA solution where (X)m denotes an amount of methanol added to have a turbidity of 5.0 NTU when methanol is added to this PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution. |
| priorityDate |
2013-09-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |