| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-01-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9708d5cdbf720d37cb94c1f5e5cc65aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45c43304189c5c1504c95a8296e776d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6441fd3d0a6811e4aa3453998741ee51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_745795382e7a65de739993fe15ec7930 |
| publicationDate |
2016-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016218217-A1 |
| titleOfInvention |
Semiconductor device including fin structure with two channel layers and manufacturing method thereof |
| abstract |
A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the first side face, and first semiconductor layers disposed over the first and second side faces of the fin structure. A thickness in a vertical direction of the first semiconductor layers is smaller than a height of the fin structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110504215-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107785262-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109817619-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347540-B1 |
| priorityDate |
2015-01-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |