| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4dfa1a1dceaa392d1095c2492cbbe4da |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-125 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2016-03-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbaf1073b47c0dcbecfcc0e7f892f3bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a71a4d7258813cb99275fa4803410ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42146df7053bcadf6daa6efac844e792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34cf75e29946e2632e8f784f6ec541b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e5c9fbfd3ab327d28c2707da9909f80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb22174e9a6991fcb0c148648930def2 |
| publicationDate |
2017-01-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017012076-A1 |
| titleOfInvention |
Photodetectors based on interband transition in quantum wells |
| abstract |
The present application relates to a photodetector based on interband transition in quantum wells. The photodetector may include a first semiconductor layer having a first conduction type; a second semiconductor layer having a second conduction type different from the first conduction type; and a photon absorption layer arranged between the first semiconductor layer and the second semiconductor layer, the photon absorption layer including at least one quantum well layer and barrier layers arranged on both sides of each quantum well layer. The present application utilizes the modulating effect of a semiconductor PN junction on a photoelectric conversion process associated with quantum wells to significantly increase a current output of the photodetector based on the quantum well material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019229227-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018069431-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11781906-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113054049-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11403373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019280148-A1 |
| priorityDate |
2015-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |