| abstract |
Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate. |