http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017178900-A1

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filingDate 2015-12-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a232ad9e4b68b93749bda608ef1b5e5
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publicationDate 2017-06-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017178900-A1
titleOfInvention Techniques for controlling ion/neutral ratio of a plasma source
abstract Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (POU) gas to an area proximate a substrate disposed within the deposition chamber. Exemplary approaches further include generating an ion beam for delivery to the substrate, and modifying a pressure within the deposition chamber in the area proximate the substrate to increase an amount of reactive ions present for impacting the substrate when the ion beam is delivered to the substrate.
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priorityDate 2015-12-21^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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