| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d479428e145822aa72cafec74a036905 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| filingDate |
2017-01-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18457040c9b58932f4665c6822ac58cf |
| publicationDate |
2017-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017263675-A1 |
| titleOfInvention |
Method for manufacturing magnetic memory device |
| abstract |
A method for manufacturing a magnetic memory device includes forming a magnetic tunnel junction layer that includes a first magnetic layer, a tunnel barrier layer, and a second magnetic layer sequentially stacked on a substrate. First line mask patterns are formed extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The magnetic tunnel junction layer is etched by a first ion-beam etch process using the first line mask patterns as an etch mask to form preliminary magnetic tunnel junctions. Second line mask patterns are formed extending in the second direction and spaced apart from each other in the first direction. The preliminary magnetic tunnel junctions are etched by a second ion-beam process using the second line mask patterns as an etch mask to form magnetic tunnel junctions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022262892-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109524541-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11744083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020328251-A1 |
| priorityDate |
2016-03-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |