| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f97f0fa258a008bf056ad04b7f380dda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2030-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-0061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2030-647 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N30-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2443
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N30-64 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N30-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate |
2017-09-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82a865f82716e3e8b05629bfb6535929
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72e982af68048930c33f5fa65e7d65b8 |
| publicationDate |
2018-03-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018067082-A1 |
| titleOfInvention |
Dielectric barrier discharge ionization detector |
| abstract |
A dielectric barrier discharge ionization detector capable of achieving a high signal-to-noise ratio is provided. The detector includes: a discharging section for generating plasma from argon-containing gas by electric discharge; and a charge-collecting section for ionizing a component in a sample gas by an effect of the plasma and for detecting ion current formed by the ionized component. The discharging section includes a cylindrical dielectric tube having a high-voltage electrode connected to AC power source as well as upstream-side and downstream-side ground electrodes and formed on its outer circumferential wall. A semiconductor film is formed on the inner circumferential surface of the tube. The upstream-side and downstream-side ground electrodes are respectively made longer than the initiation distances for a creeping discharge between the high-voltage electrode and a tube-line tip member as well as between the high-voltage electrode and the charge-collecting section. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10215732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11558952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020152424-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971338-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10436750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10436751-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10545118-B2 |
| priorityDate |
2016-09-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |