http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018175217-A1

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filingDate 2016-05-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9520340d144a474a205ff846e32f205c
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publicationDate 2018-06-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018175217-A1
titleOfInvention Device for Sensing Radiation
abstract The disclosed device for photodetection includes a first layer of a semiconducting material, a second layer of a two dimensional material, wherein the first and second layers are configured to form an electrical junction, the electrical junction having a potential energy barrier, and a third layer of a material configured to generate one or more excitons upon absorption of incident electromagnetic radiation. Charge separation from the one or more excitons generated in the third layer affects the Fermi energy of the second layer, leading to a change of the potential energy barrier height of the electrical junction. Such a photodetection device has a high sensitivity to the incident electromagnetic radiation. An array of such devices can be applied as an imaging device.
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